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In-Situ Studies of Semimagnetic Heterojunction Parameters

Published online by Cambridge University Press:  21 February 2011

Xiaohua Yu ,
N. Troullier ,
A. Raisanen ,
G. Haugstad  and
A. Franciosi
Xiaohua Yu
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
N. Troullier
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Raisanen
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
G. Haugstad
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

We have conducted a systematic study of Ge-Cd1−xMnxTe heterostructures prepared in situ by deposition of polycrystalline Ge onto atomically clean Cd1−xMnx (110) surfaces. We examined by means of high resolution synchrotron radiation photoemission the valence band offset δEv as a function of the substrate composition x (x=0, 0.35, and 0.60) and bandgap Eg (Eg = 1.47, 1.93, and 2.13 eV). We find δEv=0.84±0.10eV in all cases, and no dependence of δEv on the substrate bandgap within experimental uncertainty. This finding indicates that within the range of validity of the transitivity rule, Cd1−xMnx-Cd1−yMny heterojunctions may actually follow the common anion rule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 459
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Bastard, G., Rigaux, C., Guldner, Y., Mycielski, J., and Mycielski, A., J. Phys. (Paris) 39, 87 (1978); T. Dietl, Solid State Sci. 24, 334 (1981).Google Scholar
2. Reifenberger, R. and Schwarzkopf, D.A., Phys. Rev. Lett. 50, 907 (1983).Google Scholar
3. Ortenberg, M. von, Phys. Rev. Lett. 49, 1041 (1982).Google Scholar
4. Kroemer, H., in Molecular Beam Epitaxy and Heterostructures, edited by Chang, L.L. and Ploog, K., NATO ASI Series, (Martinus Nijhoff, Dordrecht, 1985), and references therein.Google Scholar
5. Wall, A., Chang, S., Phillip, P., Caprile, C., Franciosi, A., Reifenberger, R., and Pool, F., J. Vac. Sci. Technol. A4, 2051 (1987).Google Scholar
6. Franciosi, A., in Diluted Magnetic (Semimagnetic) Semiconductors, Aggarwal, R.L., Furdyna, J.K., and Molnar, S. von eds., Materials Research Society, Pittsburgh, Pennsylvania, 1987, p. 175.Google Scholar
7. Katnani, A.D. and Margaritondo, G., Phys. Rev. B 28, 1944 (1983).Google Scholar
8. Xiaohua Yu and Franciosi, A., (to be published).Google Scholar
9. Margaritondo, G., in Heterojunction Band Discontinuities: Physics and Device Applications, edited by Capasso, F. and Margaritondo, G. (Elsevier Science Publishers B.V., 1987).Google Scholar
10. Aldao, C.M., Vitomirov, I.M., Xu, F., and Weaver, J.H., Phys. Rev. B 40, 3711 (1989).Google Scholar