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Instability at the Melting Threshold of Laser Irradiated Silicon as the Underlying Origin of the Ripples Formation

Published online by Cambridge University Press:  22 February 2011

M. Combescot ,
J. Bok  and
C. Benoit A La Guillaume
M. Combescot
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France
J. Bok
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France
C. Benoit A La Guillaume
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Tour 23, Université Paris VII, 2 place Jussieu, 75221 Paris Cedex 05, France
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Abstract

The increase of reflectivity associated with a strong decrease of the laser penetration depth at the melting threshold of laser irradiated silicon induces a symmetry breaking with formation of a mixture of solid and liquid regions. We present a steady state solution in the case of solid and liquid stripes and we show that the liquid regions are slightly hotter than solid ones in contradiction with the previous idea of an undercooled liquid. The pattern size has to be smaller than a critical value of the order of the laser penetration depth, and can be selected by additional interference and diffraction effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 199
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Van Driel, U.M., Sipe, J.E., Young, J.P., Phys. Rev. Lett. 49, 1955 (1982).Google Scholar
2.Hawkins, W.G., Biegelsen, D.K., Appl. Phys. Lett. 42, 358 (1983).Google Scholar
3.Nemanich, R.H., Biegelsen, D.K., Hawkins, W.G., MRS Symposium Laser Annealing,Boston(nov. 1982).Google Scholar
4. For more details see Combescot, M., Bok, J., Benoit, C. à la Guillaume, submitted to Phys. Rev. Rapid Communication.Google Scholar