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Interface and Bulk Traps in Oxide-Nitride Stacked Films

Published online by Cambridge University Press:  22 February 2011

Ferran Martin  and
Xavier Aymerich
Ferran Martin
Affiliation:
Departament de Física (Electrònica), Universitat Autnòma de Barcelona, 08193-BELLATERRA (Barcelona), SPAIN.
Xavier Aymerich
Affiliation:
Departament de Física (Electrònica), Universitat Autnòma de Barcelona, 08193-BELLATERRA (Barcelona), SPAIN.
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Abstract

A new technique for the characterization of nitride electron traps responsible for the memory action of MNOS devices is proposed. It is assumed a uniform density of traps in the nitride bulk and an excess of interface traps which is described according to an exponential decreasing distribution. We have modelled the discharge of MNOS devices induced by the application of low positive gate voltages in samples previously charged up toits maximum level of trap occupancy. Since the discharge rate is necessarily dependent on the trapped charge distribution, it is possible to infer the spatial profile of traps by comparing the results obtained by computer simulation of the model to those obtained from field assisted discharge experiences in MNOS samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 141
Copyright
Copyright © Materials Research Society 1993

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References

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