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Internal Mechanical Stresses and Conductivity Mechanisms of p-n-InAsPSb/InAs-Heterostructures

Published online by Cambridge University Press:  10 February 2011

V. G. Sidorov
Affiliation:
Semiconductor Phisics Department, State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251 Russia, rykov@phsc3.stu.neva.ru
V. I. Sokolov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St. Petersburg, Russia
D. V. Sidorov
Affiliation:
Semiconductor Phisics Department, State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251 Russia, rykov@phsc3.stu.neva.ru
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Abstract

Influence of internal mechanical stresses (IMS) and dislocations on conductivity mechanisms and reliability of light emitting diode (LED) and laser InAsPSb/InAs double heterostructures has been investigated. It was shown that the presence of lattice mismatch of layers at p-n-heteroboundaries changes LED conductivity mechanisms the same way as longterm working challenges by current. It was determined that LED degradation has barrier character and is followed by appearance and growth of tunnel current components with power dependence of current from voltage. Reliability and external quantum efficiency decrease with growth of lattice mismatch.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Bert, N. A., Gorelenok, A. T., Dzigasov, A. G., Konnikov, S. G., Mdivani, V. N., Usikov, A. S., Tarasov, I. S., Fiz. Tekn. Poluprovodn. 9, 60 (1982).Google Scholar