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Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN

Published online by Cambridge University Press:  01 February 2011

A. Ramam ,
S. Tripathy  and
S.J. Chua
A. Ramam
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S. Tripathy
Affiliation:
Center for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260
S.J. Chua
Affiliation:
Center for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260
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Abstract

We have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K7.10
Copyright
Copyright © Materials Research Society 2002

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