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Intrinsic Stress Measurements in CVD Diamond Films

Published online by Cambridge University Press:  10 February 2011

Jin Yu ,
J.G. Kim ,
Y. C. Sohn  and
Y. S. Lee
Jin Yu
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon, Korea
J.G. Kim
Affiliation:
R&D Center Hyundai Electronics Ltd., Ichon, Korea
Y. C. Sohn
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon, Korea
Y. S. Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon, Korea
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Abstract

Diamond films were grown over Si substrate at 1253K by the hot filament chemical vapor deposition method using CH4/H2 gas mixture, and intrinsic stresses in the film were deduced from the ex-situ curvature measurements. In order to account for the creep deformation of the Si substrate, an elastic/plastic stress and strain analysis were conducted. Results showed that intrinsic stresses were generally several times larger than the average film stresses and always positive increasing with the film thickness. For the film thickness larger than 10μm, stress relaxation by creep of the substrate became significant, and must be considered for the accurate assessment of the film stress in diamond. Later, an analysis based on the grain growth accounted for the development of intrinsic stresses reasonably well

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 471
Copyright
Copyright © Materials Research Society 2000

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References

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