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Investigation of Deep-Level Defects in 10 Mev Electrons Irradiated Si-Gaas

Published online by Cambridge University Press:  10 February 2011

Fengmei Wu ,
Zhouying Zhao  and
Haifeng Li
Fengmei Wu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Zhouying Zhao
Affiliation:
Nanjing Electronic Devices Institute, Nanjing 210016, P. R. China
Haifeng Li
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P. R. China
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Abstract

The deep-level defects in 10 MeV electron irradiated undoped semi-insulating (SI) LEC GaAs were investigated. The results show that the density of EL2 (Ec-0.83eV) and EL12 (Ec-0.69eV) defects increases and the density of EL6 (Ec-0.39eV) and EL3 (Ec-0.58eV) defects decreases in irradiated SI-GaAs at higher fluence levels. At lower fluences, we observe decrease in density of EL2 and EL12 defects, however, the density of the EL6 and EL3 defects is increased. It could be related mainly to the dissociation of the EL2 and EL12 defects. The influence of 10 MeV electrons irradiation on the resistivity will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 263
Copyright
Copyright © Materials Research Society 1996

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