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Investigation of Electronic Properties of Porous Silicon by the Pulsed Surface Photovoltage Technique

Published online by Cambridge University Press:  28 February 2011

Th. Dittrich  and
H. Flietner
Th. Dittrich
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
H. Flietner
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

Electronic states in por-Si are investigated by the pulsed surface photovoltage technique using the por-Si/c-Si interface as probe. The values of the potentials at the por-Si/n-Si and at the por-Si/p-Si interface are -0.05 V and +0.47 V, respectively. Non-monotonous photovoltage transients related to trapping in por-Si are observed. The traps can be annealed at 150°C and generated in H20 atmosphere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 581
Copyright
Copyright © Materials Research Society 1995

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References

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