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Investigation of Thin Film Growth of B12As2 by Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

R. Nagarajan ,
J.H. Edgar ,
J. Pomeroy ,
M. Kuball  and
T. Aselage
R. Nagarajan
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS-66506, USA.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS-66506, USA.
J. Pomeroy
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
T. Aselage
Affiliation:
Department 2525/MS0613, Sandia National Laboratories, Albuquerque, NM 87185-06513, USA.
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Abstract

The chemical vapor deposition of icosahedral boron arsenide, B12As2, on 6H-SiC (0001) (on and off-axis) substrates was studied using hydrides as the reactants. The effects of temperature and reactant flow rates on the phases deposited and the crystal quality were determined. The growth rate increased with temperature from 1.5μm/h at 1100°C to 5 μm/h at 1400°C and decreased thereafter. X-ray diffraction revealed that the deposits were amorphous when the deposition temperature is below 1150° C. Above 1150°C, smooth B12As2 films were formed on 6H-SiC substrates with an orientation of (0001) B12As2 parallel to 6H-SiC (0001). Raman spectroscopy confirmed the strongly c-axis oriented nature of B12As2 film on 6H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.58
Copyright
Copyright © Materials Research Society 2003

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