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Investigations of PbxSr1-xTiO3 Thin Films and Ceramics for Microelectronic Applications

Published online by Cambridge University Press:  28 July 2011

M. Jain ,
Yu.I. Yuzyuk ,
R.S. Katiyar ,
Y. Somiya ,
A.S. Bhalla ,
F.A. Miranda  and
F.W. VanKeuls
M. Jain
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
Yu.I. Yuzyuk
Affiliation:
Faculty of Physics, Rostov State University, Zorge 5, Rostov-on-Don, 344090, Russia
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
Y. Somiya
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA
A.S. Bhalla
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA
F.A. Miranda
Affiliation:
NASA, Glenn Research Center, Cleveland, OH 44135, USA
F.W. VanKeuls
Affiliation:
Ohio Aerospace Institute, Cleveland, OH 44142, USA
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Abstract

We have investigated electrical and optical properties of the lead strontium titanate {(PbxSr1-x)TiO3 or PST} ceramic and dielectric properties of the thin films of PST at low and high frequencies. (PbxSr1-x)TiO3 compositions with × ≤ 0.4 are paraelectric at room temperature and exhibit ferroelectric phase transition below room temperature. Only one phase transition in the PST system (compared to three in BaxSr1-xTiO3) was recorded. The studies indicated that PST has potential for tunable microwave devices in the paraelectric phase. In the present studies, Pb0.3Sr0.7TiO3 (PST30) ceramic was prepared by the conventional solid-state reaction method and thin films of PST were prepared by sol-gel technique. Structural, microstructural, dielectric, and Raman measurements were performed on these samples. Sharp phase transition was observed in case of the ceramic by dielectric and Raman measurements at 283 K. Raman measurements revealed well-pronounced soft-mode behavior below the Curie temperature in PST ceramic. The thin film of PST deposited on lanthanum aluminate substrate was highly (100) oriented and showed dielectric maxima at ∼280 K, which was close to that in case of the bulk. Eight element coupled micro-strip phase shifters (CMPS) was fabricated on the PST film and tested in the frequency range of 15-17 GHz. The average figure of merit of 49 °/dB for PST30 film in the Ku band at 533 kV/cm suggests the potentiality of these films for high frequency tunable dielectric devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.36
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Auciello, O., Foster, C.M., and Ramesh, R., Annu. Rev. Mater. Sci., 28, 501 (1998).Google Scholar
[2] Polla, D.L., Francis, L.F., Annu. Rev. Mater. Sci., 28, 563 (1998).Google Scholar
[3] Haertling, G.H., J. Am. Ceram. Soc., 82, 797 (1999).Google Scholar
[4] Dimos, D., Mueller, C.H., Annu. Rev. Mater. Sci., 28, 397, (1998).Google Scholar
[5] Majumder, S.B., Jain, M., Martinez, A., Van Keuls, F.W., Miranda, F.A., and Katiyar, R.S., J. Appl. Phys., 90, 896 (2001).Google Scholar
[6] Miranda, F.A., Van Keuls, F.W., Romanofsky, R.R., Mueller, C.H., Alterovitz, S., and Subramanyam, G., Integrated Ferroelectrics, 42, 131 (2002).Google Scholar
[7] Wu, H.D., Zhang, Z., Barnes, F., C. Jackson, M., Kim, A., and Cuchiaro, J. D., IEEE Trans. Appl. Supercond., 4, 156 (1994).Google Scholar
[8] Tombak, A., Maria, J-P., Ayguavives, F., Jin, Z., Stauf, G. T., Kingon, A., and Mortazawi, A., IEEE Microwave Wireless Components Lett., 12, 3 (2002).Google Scholar
[9] Nomura, S. and Sawada, S., J. Phys. Soc. Japan, 10, 108 (1955).Google Scholar
[10] Somiya, Y., Bhalla, A.S., Cross, L.E., Int. J. Inorg. Mater., 3, 709 (2001).Google Scholar
[11] Chung, H.J., Kim, J.H., and Woo, S.I., Chem. Mater. 13, 1441 (2001);Google Scholar
Chung, H. J., and Woo, S.I., J. Vac. Sci. Technol. B, 19, 275, (2001).Google Scholar
[12] Chou, C.C., Hou, C.S., Chang, G.C., Cheng, H.F., Appl. Surf Sci., 142, 413 (1999).Google Scholar
[13] Kim, Y.K., Lee, K.S., and Baik, S., J. Mater. Res., 16, 2463, (2001).Google Scholar
[14] Jain, M., Bhattacharya, P., Yuzyuk, Yu.I., Katiyar, R.S., and Bhalla, A.S., Proceedings of Materials Research Society Fall meeting, 784, C11.15.1 (2003).Google Scholar
[15] Kang, D.H., Kim, J.H., Park, J.H., Yoon, K.H., Mat. Res. Bulletin, 36, 265 (2001).Google Scholar
[16] Jain, M., S. Majumder, B., Guo, R., Bhalla, A.S., and Katiyar, R.S., Materials Letters, 56, 692 (2002).Google Scholar
[17] Naik, V.M., Haddad, D., Naik, R., Mantese, J., Schubring, N. W., Micheli, A.L., and Auner, G.W., J. Appl. Phys., 93 (2003) 1731.Google Scholar
[18] Jain, M., Yuzyuk, Yu.I., Katiyar, R.S., Somiya, Y., and Bhalla, A.S., Ferroelectrics, (2003) (In press).Google Scholar
[19] Jain, M., Katiyar, R.S., Bhalla, A.S., Miranda, F.A., and Van Keuls, F.W., Appl. Phys. Lett., (2004). (Submitted)Google Scholar
[20] Nilsen, W.G. and Skinner, J.G., J. Chem. Phys., 48, 2240 (1968).Google Scholar
[21] Jain, M., Yuzyuk, Yu.I., Katiyar, R.S., Somiya, Y., and Bhalla, A.S., Physical Review B, (2004). (Submitted)Google Scholar
[22] Kleemann, W., Albertini, A., Kuss, M., and Lindner, R., Ferroelectrics, 203, 57 (1997).Google Scholar
[23] Ouillon, R., Pinan-Lucarre, J.-P., Ranson, P., PPruzan, h., Mishra, S.K., Ranjan, R., and Pandey, D., J. Phys.:Condens. Matter, 14, 2079 (2002).Google Scholar
[24] Petzelt, J., Ostapchuk, T., Gregora, I., Rychetský, I., Hoffmann-Eifert, S., Pronin, A.V., Yuzyuk, Y., Gorshunov, B.P., Kamba, S., Bovtun, V., Pokorný, J., Savinov, M., Porokhonskyy, V., Rafaja, D., Vanek, P., Almeida, A., Chaves, M.R., Volkov, A.A., Dressel, M., and Waser, R., Phys. Rev. B, 64, 184111 (2001).Google Scholar