Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-15T10:15:55.449Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Enhanced Grain Growth in Thin Films

Published online by Cambridge University Press:  28 February 2011

Harry A. Atwater ,
Carl V. Tiiompson  and
Henry I. Smith
Harry A. Atwater
Affiliation:
Department of Electrical Engineering and Computer Science
Carl V. Tiiompson
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA 02139
Henry I. Smith
Affiliation:
Department of Electrical Engineering and Computer Science
Get access

Abstract

Ion beam enhanced grain growth has been investigated in thin films of Ge. Grain boundary mobilities are greatly enhanced over their thermal equilibrium values and exhibit a very weak temperature dependence. We propose that defects which are generated by the ion beam at or near the grain boundary are responsible for the boundary mobility enhancement. Films of Ge deposited under different conditions, either unsupported or on thermally oxidized Si, exhibit similar normal grain growth enhancement when implanted with 50 keV Ge+. Beam-enhanced grain growth in Ge was also demonstrated using Xe+, Kr+, and Ar+ ions. The variation in growth enhancement with projectile ion mass is in good agreement with the enhanced Frenkel defect population calculated using a modified Kinchin-Pease formula and Monte Carlo simulation of ion transport in thin films. Calculations based on experiments suggest that there is approximately one atomic jump across the grain boundary per defect generated. Also, the grain growth rate for a given beam-generated defect concentration near the boundary is approximately equal to the expected growth rate for the same defect concentration if thermally generated.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 499
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Williams, J. S., Elliman, R. G., Brown, W. L. and Seidel, T. E., Phys. Rev. Lett. 55, 1482 (1985).Google Scholar
[2] Minear, R. L., Nelson, D. G. and Gibbons, J. F., J. Appl. Phys., 43, 3468 (1972).Google Scholar
[3] Atwater, H. A., Smith, H. I. and Thompson, C. V., in Beam-Solid Interactions and Phase Transformations, edited by Kurz, H., Olson, G.L. and Poate, J.M. (Materials Research Society, Pittsburgh, PA, 1986) pp. 337–342.Google Scholar
[4] Wada, Y. and Nishimatsu, S., J. Electrochem. Soc., 125, 1499 (1978).Google Scholar
[5] Morehead, F. F. and Crowder, B. L., in First International Conference on Ion Implantation edited by Eisen, F. and Chadderton, L., (Gordon and Breach, New York, 1971), p. 25.Google Scholar
[6] Biersack, J. P. and Haggmark, L. G., Nucl. Instr. and Meth. 174, 257 (1980).Google Scholar
[7] Sigmund, P., Rad. Eff. 1, 15 (1969).Google Scholar
[8] Norgett, M.J., Robinson, M.T. and Torrens, I.M., Nucl. Eng. Design 33, 50 (1974).Google Scholar
[9] Benneman, K.H., Phys. Rev. 130, 1763 (1963).Google Scholar