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Ion Channeling Studies of Crystallinity, Amorphization, and Thermal Annealing in Single-Crystal YBa2Cu3Ox.

Published online by Cambridge University Press:  28 February 2011

N. G. Stoffel
Affiliation:
Bellcore, Red Bank, New Jersey 07701–7020
W. A. Bonner
Affiliation:
Bellcore, Red Bank, New Jersey 07701–7020
P. A. Morris
Affiliation:
Bellcore, Red Bank, New Jersey 07701–7020
B. J. Wilkens
Affiliation:
Bellcore, Red Bank, New Jersey 07701–7020
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Abstract

We have performed Rutherford backscattering spectroscopy (RBS) and axial channeling on single crystals of the high-temperature superconductor YBa2Cu3Ox. The results demonstrate good crystal quality and cation stoichiometry in the as-grown samples. We observe some surface disorder, and estimate from the surface-peak intensities that there is roughly one formula unit of misregistered atoms per unit cell, or one molecular monolayer of surface disorder.

We have studied the surface disorder induced in these crystals by various surface processing treatments, and have tried to achieve solid-phase epitaxial regrowth of disordered surface layers. Preliminary results have been obtained on the annealing of 100 nm amorphous layers formed on the surface of single crystals by 30 keV oxygen ion implantation. The Ba in the amorphous layer was found to segregate strongly to the surface for annealing temperatures as low as 500°C, although the crystalline phase does not decompose even at much higher temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Feldman, L. C., Mayer, J. W., and Picraux, S. T., Materials Analysis by Ion Channeling, Academic Press (1932).Google Scholar
2. Stoffel, N. G., Morris, P. A., Bonner, W. A., and Wilkens, B. J., submitted to Phys. Rev. B.Google Scholar
3. Hasegawa, H., Kawabe, U., Aita, J., and Ishiba, T., Jpn. J. Appl. Phys. 26, L673 (1987);Google Scholar
Bonner, W. A. and Morris, P. A., in preparation.Google Scholar
4. Barret, J. H., Phys. Rev. B3, 1527 (1971).Google Scholar
5. Leavitt, J. A., Stoss, P., Cooper, D. B., Seerveld, J. L., McLntyre, L. C. Jr, Davis, R. E., Gutierrez, S., and Reith, T. M., Nucl. Instrum. & Methods B9, 344 (1985).Google Scholar
6. Clark, G. J., Marwick, A. D., Koch, R. H., and Laibowitz, R. B., Appl. Phys. Lett. 51, 139 (1987).Google Scholar
7. White, A. E., et al., submitted to Phys. Rev.Google Scholar
8. Tarascon, J. M., Mckinnon, W. R., Greene, L. H., Hull, G. W., and Vogel, E. M., Phys. Rev. B36, 225 (1987).Google Scholar