Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-04-30T17:09:26.225Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Damage and Annealing of Epitaxial Gallium Nitride and Comparison With GaAs/AlGaAs Materials

Published online by Cambridge University Press:  21 February 2011

H.H. Tan ,
J.S. Williams ,
C. Yuan  and
S.J. Pearton
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, Canberra, 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, RSPSE, Australian National University, Canberra, 0200, Australia
C. Yuan
Affiliation:
Emcore Corp., Somerset, N.J. 08873, USA (deceased)
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Fl. 32611, USA
Get access

Abstract

Ion damage build up has been measured by ion channeling in good quality epitaxial GaN films on sapphire. GaN is found to be remarkably resistant to ion damage, with extremely efficient dynamic defect annihilation occurring at liquid nitrogen temperature during ion implantation. When disorder does accumulate at doses around 1016cm−2 of 90 keV Si ions, the surface appears to be a strong sink for damage build up and possibly the nucleation of amorphous layers. Once ion disorder has been produced in GaN, it is extremely difficult to remove by annealing. GaN exhibits disordering and annealing behaviour which is somewhat similar to that in high Al-content AlGaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 807
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Akasaki, I., Amano, M., Kito, M. and Hiramatsu, K., J. Lumin, 48/49, 666 (1991).Google Scholar
2 Davis, R.F., Proc. IEEE 79,702 (1991).Google Scholar
3 Nakamura, S., Iwasa, N., Sendi, M. and Mukai, T., Jpn. J. Appl.Phys. 31, 1258 (1992).Google Scholar
4 Lin, M.E., Sverdlov, B., Strite, S., Morkoc, H. and Drakin, A.E., Electron. Lett. 29, 1759 (1993).Google Scholar
5 Matsulka, T., Susaki, T. and Katsui, A., Optoelectron. Device Technol. 5,53 (1990).Google Scholar
6 Glaser, E.R., Kennedy, T.A., Crookham, H., Freitas, J.A., Khan, M.A., Olsen, D. T. and Kuznia, J.N., Appl. Phys. Lett. 63,2673 (1993).Google Scholar
7 Pearton, S.J., Abernathy, C.R., Wisk, P., Hobson, W.S. and Ren, F., Appl. Phys. Lett. 63, 1143 (1993).Google Scholar
8 Wilson, R.G., Pearton, S.J., Abernathy, C.R. and Zavada, J.M., Appl. Phys. Lett. 66, 2240 (1995).Google Scholar
9 Tan, H.H., Jagadish, C., Williams, J.S., Zou, J., Cockayne, D.J.H. and Sikorski, A., J. Appl. Phys. 77, 87 (1995).Google Scholar
10 Ion Beams for Materials Analysis, edited by Bird, J.R. and Williams, J.S. (Academic, Sydney, 1989) Chap.6.Google Scholar
11 Tan, H.H., Jagadish, C., Williams, J.S., Zou, J. and Cockayne, D.J.H., J. Appl. Phys. (in press).Google Scholar