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Ion Implantation Induced Deep Defects in n-type 4H-Silicon Carbide

Published online by Cambridge University Press:  11 February 2011

A. O. Evwaraye ,
S. R. Smith ,
W. C. Mitchel  and
M. A. Capano
A. O. Evwaraye
Affiliation:
Air Force Research Laboratory, Materials Directorate, MLPS, 3005 P Street, Wright-Patterson Air Force Base, OH 45433–7707
S. R. Smith
Affiliation:
Air Force Research Laboratory, Materials Directorate, MLPS, 3005 P Street, Wright-Patterson Air Force Base, OH 45433–7707
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials Directorate, MLPS, 3005 P Street, Wright-Patterson Air Force Base, OH 45433–7707
M. A. Capano
Affiliation:
Air Force Research Laboratory, Materials Directorate, MLPS, 3005 P Street, Wright-Patterson Air Force Base, OH 45433–7707
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Abstract

Aluminum (Al) and argon (Ar) ions were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV at a dose of 2 × 1016 cm-2. After annealing at 1600 °C for 5–60 minutes, Schottky diodes were fabricated on the ion implanted samples. Deep Level Transient Spectroscopy (DLTS) was used to characterize ion implantation induced defects. A defect at EC-0.18 eV was observed in the Al+ implanted devices annealed for five and fifteen minutes. However, annealing for 30 minutes produced an additional deeper defect at EC -0.24 eV. This defect annealed out after a sixty minute anneal. DLTS studies of Ar+ implanted devices showed six defect levels at EC -0.18 eV, EC -0.23 eV, EC -0.31 eV, EC -0.38eV, EC -0.72 eV, and EC -0.81eV. These defects are attributed to intrinsic-related defects. It is suggested that “hot” implantation of Al+ inhibits the formation of intrinsic-related defects. While “hot” implantation of Ar+ into 4H-SiC does not reduce the concentration of the vacancies and interstitials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Capano, M. A., Santhakumar, R., Vengopal, R., Melloch, M. R. and Cooper, J. A. Jr J. Electron. Materials 29, 210 (2000).Google Scholar
2. Kimoto, T., Inoue, N., and Matsunami, H. phys. sat. sol (a) 162, 263 (1997).Google Scholar
3. Christel, L. A. and Gibbons, J. F., J. Appl. Phys. 52, 5050 (1981).Google Scholar
4. Gardner, J., Rao, M. V., Holland, O. W., Kelner, G., Simons, D. S., Chi, P. H., Andrews, J. M., Kretchmer, J. and Ghezzo, M. J. Electron. Materials 25, 885 (1995).Google Scholar
5. Alok, D., Baliga, B. J., and McLarty, P. K. IEEE Electron Device Letters 15, 394 (1994).Google Scholar
6. Capano, M. A., Ryu, S., Melloch, M. R., Cooper, J. A. Jr, and Buss, M. R. J. Electron. Materials 27, 370 (1998).Google Scholar
7. Troffer, T., Schardt, M., Frank, T., Itoh, H., Pensl, G., Heindl, J.. Strunk, H. P., and Maier, M. phys. stat. sol (a) 162, 277 (1997)Google Scholar
8. Dalibor, T., Pensl, G., Matsunami, H., Kimoto, T., Choyke, W. J., Schoner, A., and Nordell, N. phys. sat. sol (a) 162, 199 (1997).Google Scholar