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Ion Implantation Induced Effects at Polysdlicon Gate Feature Edges

Published online by Cambridge University Press:  25 February 2011

M. G. Stinson ,
P. L. Smith  and
C. M. Osburn
M. G. Stinson
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, North Carolina 27709 Dept. of Electrical and Computer Engineering North Carolina State University, Raleigh, North Carolina 27695–7911
P. L. Smith
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, North Carolina 27709
C. M. Osburn
Affiliation:
MCNC, P.O. Box 12889, Research Triangle Park, North Carolina 27709 Dept. of Electrical and Computer Engineering North Carolina State University, Raleigh, North Carolina 27695–7911
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Abstract

Recently, an enhanced leakage associated with ion implantation at polysilicon gate edges has been reported (1). In this study, TEM and SIMS characterization have been done to supplement electrical measurements in order to better understand the degradation. SIMS, XTEM, and TRIM analyses of arsenic implants through 7 nm gate oxides show considerable ion mixing. A roughening of the underlying silicon substrate leads to asperities which are believed to play an important role in enhancing leakage (2). XTEM analysis of a polysilicon gate edge also reveals the effects of volume expansion associated with the incorporation of both dopant and knock-on oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 733
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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