Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-19T23:28:16.234Z Has data issue: false hasContentIssue false

Ion Implantation of Iron into an Immiscible Copper Matrix

Published online by Cambridge University Press:  16 February 2011

Ivan H. Murzin
Affiliation:
Metallurgy Department and Institute of Materials Science, The University of Connecticut, Storrs, CT 06269-3136
Donald I. Potter
Affiliation:
Metallurgy Department and Institute of Materials Science, The University of Connecticut, Storrs, CT 06269-3136
Get access

Abstract

Fluences from 1×1017 to 9.6×1017 cm−2 of single and doubly charged iron ions accelerated through 170 kV were implanted into polycrystalline copper substrates at room temperature. An order of magnitude decrease in reflectivity was observed during implantation as a result of sputter-induced changes in surface topography and subsurface accumulation of iron. Both scanning electron microscopy and optical microscopy showed that the bombarded surfaces consisted of (110) and (100) grains having an intragranular, ridge-like structure. Significant height differences formed between grains as a result of their different sputtering yields. Transmission electron microscopy reveals that the implanted iron forms a face-centered-cubic metastable solid solution with the copper. Auger electron spectroscopy confirmed iron accumulation beneath the surface with maximum concentrations approaching in excess of 20 atomic percent.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Longworth, G. and Jain, R., J. Phys. F: Metal. Phys. 8, 351 (1978).Google Scholar
2. Jain, R. and Longworth, G., J. Phys. F: NMetal. Phys. 8, 363 (1978).Google Scholar
3. Patankar, J., Phase, D.M., Kulkarni, S.A., Kulkarni, V.N., Ghaisas, S.V, Ogale, S.B. and Bhide, V.G., Nucl. Instr. & Meth. in Phys. Res. B 19/20, 673 (1987).Google Scholar
4. Auciello, O., in: Ion Bombardment Modification of Surfaces, edited by Auciello, O. and Kelly, R. (Elsevier, Amsterdam, Oxford, New York, Tokyo, 1984). p. 466.Google Scholar
5. Roosendaal, H.E., in Sputtering by Particle Bombardment I, edited by Behrisch, R. (Springer-Verlag, Berlin, Heidelberg, New York, 1981), p. 219.Google Scholar
6. Carter, G., Navinsek, B. and Whitton, J.L, in Sputteringt by Particle Bombardment II, edited by Behrisch, R. (Springer-Verlag, Berlin, Heidelberg, New York, Tokyo, 1983), p. 231.Google Scholar
7. Davis, L.E., McDonald, M., Palmberg, P.W., Riach, G.E. and Weber, R.E. Hlandbook of Auger Electron Spectroscopy, 2nd ed. (Physical Electronics Ind., Eden Prairie, 1976), p. 249.Google Scholar