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Ion Milling of Compound Semiconductors for Transmission Electron Microscopy

Published online by Cambridge University Press:  21 February 2011

A G Cullis  and
N G Chew
A G Cullis
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road Malvern, Worcestershire WR14 3PS, England
N G Chew
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road Malvern, Worcestershire WR14 3PS, England
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Abstract

Serious artefactual structures can be introduced into transmission electron microscope specimens of compound semiconductors when the latter are prepared by ion milling under non-optimum conditions. In the present investigations, the nature of these artefacts is characterised and results obtained using conventional argon ion milling are compared with those obtained using alternative ion species, including iodine ions. This work demonstrates the large improvement in specimen structural quality which can be achieved by combining a logical selection of ion species with a careful choice of milling conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 115: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials I , 1987 , 3
Copyright
Copyright © Materials Research Society 1988

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References

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