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Ion Mixing of Near-Noble Transition Metal Films on Evaporated and Large-Grained Aluminum Substrates

Published online by Cambridge University Press:  25 February 2011

E. Ma ,
X.-A. Zhao  and
M-A. Nicolet
E. Ma
Affiliation:
California Institute of Technology, Pasadena, CA 91125
X.-A. Zhao
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Ion mixing experiments using Xe ions at temperatures ranging from 77K to about 450K were conducted on Al/Ni and Al/Pt couples. Evaporated polycrystalline Al films and large-grained Al crystals were used as substrates. Xenon irradiation of Al/Pt bilayers achieves considerable intermixing and a temperature dependence is observed. Only moderate interfacial mixing with little temperature dependence is observed in Al/Ni bilayers. The mixing efficiency of Al/Ni is consistent with the phenomenological model of thermal spike mixing, and so is the absence of a pronounced temperature dependence below 450K. No significant difference is noted in ion mixing of evaporated and large-grained Al substrates. In contrast to ion mixing, Al/Pt and Al/Ni samples behave similarly upon thermal annealing and form well-defined compounds. The results are also compared with Si/metal systems, where silicides can be formed readily by low temperature thermal annealing as well as by ion mixing of bilayer samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 221
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Matteson, S. and Nicolet, M-A., Ann. Rev. Mater. Sci. 13, 339 (1983).Google Scholar
2. Nastasi, M., Hung, L.S., and Mayer, J.W., Appl. Phys. Lett. 43, 831 (1983).Google Scholar
3. Mayer, J.W., Tsaur, B.Y., Lau, S.S., and Hung, L.S., Nucl. Instr. Meth. 182/183, 1 (1983).Google Scholar
4. Averback, R.S., Thompson, L.J. Jr., Moyle, J. and Schalit, M., J. Appl. Phys. 53(3), 1342(1982).Google Scholar
5. Zhao, X.-A., Banwell, T. and Nicolet, M-A., presented at the SPIE Conference, SPIE Vol.623, 255 (1986).Google Scholar
6. Cheng, Y.T., Workman, T.W., Johnson, W.L. and Nicolet, M-A., presented at MRS Fall meeting, Boston, Dec. 1986, to appear in MRS Symp. Proc. (in press)Google Scholar
7. The Al substrates in these experiments were polished single crystals; no attempt was made to remove the native oxide before the transition metals were deposited on them.Google Scholar
8. Peacock, A.T. and Dearnaley, G., Proceedings of the 2nd Workshop on Ion Mixing and Surface layer Alloying, eds. Follstaedt, D. M., Averback, R. S. and Nicolet, M-A., Pasadena, CA, USA, January 1986.Google Scholar
9. W.L. Johnson. Cheng, Y.T., van Rossum, M., and Nicolet, M-A., Nucl. Instr. Meth. B7/8, 657 (1985).Google Scholar
10. Cheng, Y.T., Zhao, X.-A., Banwell, T., Workman, T., Nicolet, M-A., and Johnson, W.L., J. Appl. Phys. 60, 2515 (1986).Google Scholar
11. Heat of mixing calculated-for an A50B50 compound, Miedema, A.R., Philips Tech. Review 8, 217 (1976).Google Scholar
12. Cohesive energy for A50 B50 calculated from ΔHcoh =1/2(ΔHO A +ΔHO B )+ΔHC, where ΔHO A and ΔHO B are the cohesive energies of the corresponding elemental solids A and B, obtained from C. kittel, Introduction to solid state Physics, 5th ed. (Wiley, NY, 1976), p. 75Google Scholar
13. Zhao, X.-A., Ma, E. and Nicolet, M-A., Materials Lett. (in press).Google Scholar
14. Zhao, X-A., Ma, E., Yang, H.-Y. and Nicolet, M-A., presented at the Inter. Conf. on Metallur. Coatings, San Diego, March 1987, to appear in Thin Solid Films.Google Scholar
15. Zhao, X.-A., Yang, H.-Y., Ma, E. and Nicolet, M-A., J. Appl. Phys. (submitted).Google Scholar
16. Tsaur, B.Y., Liau, Z.L., and Mayer, J.W., Appl. Phys. Lett. 34, 168 (1979).Google Scholar
17. Sharma, B.L., Diffusion in Semiconductors, Trans. Tech. Publications (Clausthal-Zellerfeld) 1970.Google Scholar