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Ion-Beam Polishing of Diamond Thin Films

Published online by Cambridge University Press:  21 February 2011

Dong-Gu Lee  and
Rajiv K. Singh
Dong-Gu Lee
Affiliation:
University of Florida, Dephartment of Materials Science and Engineering, Gainesville, FL32611
Rajiv K. Singh
Affiliation:
University of Florida, Dephartment of Materials Science and Engineering, Gainesville, FL32611
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Abstract

Planarization of diamond thin films has been carried out using a remote electron cyclotron resonance (ECR) oxygen plasma under a negative bias. Diamond thin films were synthesized by hot filament chemical vapor deposition (HFCVD). The surface roughness (RJ of the diamond films could be considerably reduced from 0.2 μπι to 0.05 μπι using the ECR oxygen plasma. Low planarization and a high etching rate of diamond films were observed for an incident angle of the ion beam to the film surface normal below 45 degrees. High applied bias above -600 V caused secondary discharge effects, resulting in inhomogeneous etching. With an increase in incident angle, needlelike morphology was observed in the diamond film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 699
Copyright
Copyright © Materials Research Society 1995

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