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Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

Published online by Cambridge University Press:  25 February 2011

J. M. Poate ,
D. C. Jacobson ,
F. Priolo  and
Michael O. Thompson
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Priolo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Michael O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

Segregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 533
Copyright
Copyright © Materials Research Society 1989

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References

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