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Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells

Published online by Cambridge University Press:  21 February 2011

H.H. Tan ,
J.S. Williams ,
C. Jagadish ,
P.T. Burke  and
M. Gal
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, A.C.T., Australia, hoel09@rsphyl .anu.edu.au
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, A.C.T., Australia, hoel09@rsphyl .anu.edu.au
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, A.C.T., Australia, hoel09@rsphyl .anu.edu.au
P.T. Burke
Affiliation:
School of Physics, University of New South Wales, Sydney, N.S.W. 2052, Australia
M. Gal
Affiliation:
School of Physics, University of New South Wales, Sydney, N.S.W. 2052, Australia
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Abstract

A comparison of ion irradiation-induced intermixing in GaAs-Al0.54Gao46As quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Very large energy shifts are observed together with good recovery of the photoluminescence intensities after annealing in samples irradiated with protons. No saturation in the energy shifts is observed in samples irradiated even up to a dose of 4.3 x 1016 cm-2. Similar large shifts with low absorption are also observed in O and As implanted samples but at a significantly lower ion dose. However, both the heavier ions show a saturation effect in the degree of intermixng at higher doses. The degree of intermixing is believed to be a delicate balance among multiple competing processes that occurs across the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 823
Copyright
Copyright © Materials Research Society 1996

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References

1 Hirayama, Y., Suzuki, Y., Tarucha, S. and Okamoto, H., Jpn. J. Appl. Phys. 24, p. L516 (1985).Google Scholar
2 Vieu, C., Defect and Diffusion Forum 119–120, p. 127 (1995).Google Scholar
3 Cibert, J., Petroff, P.M., Werder, D.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49, p. 223 (1986).Google Scholar
4 Kash, K., Tell, B., Grabbe, P., Dobisz, E.A., Craighead, H.G. and Tamargo, M.C., J. Appl. Phys. 63, p. 190 (1988).Google Scholar
5 Redinbo, G.F., Craighead, H.G. and Hong, J.M., J. Appl. Phys. 74, p. 3099 (1993).Google Scholar
6 Tan, H.H., Jagadish, C., Williams, J.S., Zou, J., Cockayne, D.J.H. and Sikorski, A., J. Appl. Phys. 77, p. 87 (1995).Google Scholar
7 Tan, H.H., Jagadish, C., Williams, J.S., Zou, J. and Cockayne, D.J.H., J. Appl. Phys. (submitted, Sept. 1995).Google Scholar
8 Ziegler, J.F., Biersack, J.P. and Littmark, U., The stopping and range of ions in solids, edited by Ziegler, J.F. (Pergamon Press, New York, 1985).Google Scholar
9 Elman, B., Koteles, E.S., Melman, P. and Armiento, C.A. J. Appl. Phys. 66, p. 2104 (1989).Google Scholar
10 Piva, P.G., Poole, P.J., Buchanan, M., Champion, G., Templeton, I., Aers, G.C., Williams, R., Wasilewski, Z.R., Koteles, E.S. and Charbonneau, S., Appl. Phys. Lett. 65, p. 621 (1994).Google Scholar
11 Deppe, D.G. and Holonyak, N. Jr., J. Appl. Phys. 64, p. R93 (1988).Google Scholar
12 Peyre, H., Camassel, J., Gillin, W.P., Homewood, K.P. and Grey, R., Matl. Sci. and Eng. B28, p. 332 (1994).Google Scholar