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Kinetic Control of Dome Cluster Composition by Varying Ge Deposition Rate

Published online by Cambridge University Press:  01 February 2011

E. P. McDaniel ,
Jeff Drucker ,
Qian Jiang ,
P. A. Crozier  and
David J. Smith
E. P. McDaniel
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504
Jeff Drucker
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504 Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
Qian Jiang
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
P. A. Crozier
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
David J. Smith
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504 Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
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Abstract

The mean size of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) at substrate temperatures, T, of 550°C and 650°C is deposition rate dependent. For samples with nominal Ge coverages near 8 ML (1 ML = 6.78 ×1014 atoms/cm2) and deposition rates between 1.4 and 17.5 ML/min, higher deposition rates decreased the mean dome diameter and increased the dome areal density. Additionally, the critical volume for the pyramid-to-dome transition decreases with increasing deposition rate for islands grown between T = 550°C and 650°C. By this measure, the Ge content of the dome clusters rises with increasing deposition rate. Quantitative, nm-resolved electron energy loss spectroscopy (EELS) measurements taken in a scanning transmission electron microscope confirm these results. For domes grown at T = 650°C with rates of 1.4 ML/min and 17.5 ML/min, EELS indicates 59% and 70% Ge compositions, respectively. These results show that dome cluster composition may be kinetically controlled by varying the Ge deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U4.4
Copyright
Copyright © Materials Research Society 2005

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References

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