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Kinetics, Microstructure And Mechanisms of Ion Beam Induced Epitaxial Crystallization of Semiconductors.

Published online by Cambridge University Press:  26 February 2011

R.G. Elliman ,
J.S. Williams ,
D.M. Maher  and
W.L. Brown
R.G. Elliman
Affiliation:
CSIRO Chemical Physics, P.O. Box 160, Clayton, 3168, Australia.
J.S. Williams
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia.
D.M. Maher
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., U.S.A.
W.L. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., U.S.A.
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Abstract

Ion-beam induced epitaxy is shown to be essentially athermal over the temperature range 200-400°C, and to exhibit no dependence on substrate orientation and little dependence on doping in this regime. On the other hand, the formation and propagation of defects during growth and the interaction of the advancing crystal-amorphous interface with implanted impurities is essentially identical for both thermally induced and ion-beam induced epitaxy. These observations lead to a simple model for ion-beam induced epitaxial crystallization in which epitaxial growth is nucleated by defects generated at, or near, the crystal-amorphous interface by the ion beam. Comparisons of ion-beam induced epitaxy and thermally induced epitaxy suggest that the 2.7 eV activation energy associated with the latter process is dominated by a 2.0 eV nucleation step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 319
Copyright
Copyright © Materials Research Society 1985

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References

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