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Lanthanide Refractory Semiconductors Based on the Th3P4 Structure

Published online by Cambridge University Press:  25 February 2011

K. A. Gschneidner Jr. ,
J. F. Nakahara ,
B. J. Beaudry ,
T. Takeshita  and
Ames Laboratory
K. A. Gschneidner Jr.
Affiliation:
Also Department of Materials Science and Engineering
J. F. Nakahara
Affiliation:
Iowa State University, Ames, IA 50011
B. J. Beaudry
Affiliation:
Iowa State University, Ames, IA 50011
T. Takeshita
Affiliation:
Present address: Mitsubishi Metal Corp. Ltd., 1-297 Kitabukuro-cho, Omiya, Saitama, Japan
Ames Laboratory
Affiliation:
Supported by the U. S. Department of Energy, Office of Defense Energy Projects and Special Applications, Office of Nuclear Energy, under contract no. W-7405-ENG-82
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Abstract

The phase relationships and the important structural, electrical and thermal properties of the R3X4-R2X3 (where R = lanthanides and X = S, Se and Te) phases having the Th3P4 -type structure are reviewed. The room temperature electrical resistivity and Seebeck coefficient of these materials are independent of R and only slightly dependent on X, but critically dependent on the X:R ratio. The long term stability of these phases is also reviewed. Although these materials have good thermoelectric properties there are some problems which need to be solved before these phases can be utilized in thermoelectric devices. These problems include long term stability, higher than desirable thermal conductivities, and low electron mobilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 359
Copyright
Copyright © Materials Research Society 1987

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References

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