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Large Diameter Soi Wafers by Zone-Melting-Recrystallization

Published online by Cambridge University Press:  28 February 2011

P. M. Zavracky
Affiliation:
Kopin Corporation, Taunton, Massachusetts 02780
D. P. Vu
Affiliation:
Kopin Corporation, Taunton, Massachusetts 02780
L. Allen
Affiliation:
Kopin Corporation, Taunton, Massachusetts 02780
W. Henderson
Affiliation:
Kopin Corporation, Taunton, Massachusetts 02780
H. Guckel
Affiliation:
Wisconsin Center for Applied Microelectronics (WCAM), Madison, Wisconsin 53706
J. J. Sniegowski
Affiliation:
Wisconsin Center for Applied Microelectronics (WCAM), Madison, Wisconsin 53706
T. P. Ford
Affiliation:
Kopin Corporation, Taunton, Massachusetts 02780
J. C. C. Fan
Affiliation:
Kopin Corporation, Taunton, Massachusetts 02780
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Abstract

A pilot production Zone-melting Recrystallization system was designed and built with a capability to handle 25 wafer batches of 4“, 5“and 6“wafers. The design addresses several production requirements including high throughput, batch processing and automation. Measurements on product wafers indicate that material quality was not sacrificed to achieve production throughput levels. Exceptional structural quality and good electrical properties have been obtained on SOI wafers produced within this system. Specifically, defect densities as low as 5 X 104 /cm2 a level an order of magnitude lower than previously reported, have been achieved while the minority carrier lifetime of up to 30 microseconds, intrinsic dopant level < 2 X 1015 /cm3 and junction leakage below 1 X 1016 amperes/cm2 are either as good as or better than previously reported values. We believe that defect free ZMR material will become a reality.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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