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Laser Annealing of Selenium Implxnted InP

Published online by Cambridge University Press:  15 February 2011

Sukhdev GILL ,
Peter Topham ,
Brian Sealy ,
Kenneth Stephens  and
Michael Hales
Sukhdev GILL
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
Peter Topham
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
Brian Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
Kenneth Stephens
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
Michael Hales
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K. Plessey Research (Caswell) Ltd., Towcester, Northants, U.K., (Now with ITT, Paignton, Devon, U.K.)
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Abstract

We have compared the electrical properties of laser and furnace annealed selenium implanted InP. Both annealing methods produce high activities, the best being for anneals in a phosphine ambient which also produces a better surface finish. Reasons for the poorer results from the laser annealed samples have been deduced from Rutherford backscattering experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 707
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Cullis, A.G., Webber, H.C. and Robertson, D.S., Laser-Solid Interactions and Laser Processing, 1978 AlP Conf. Proc. No. 50.Google Scholar
2. Davies, D.E., Kennedy, E.F., Comer, J.J. and Lorenzo, J.P., Appl. Phys. Lett. 36, p.922–924 (1980).CrossRefGoogle Scholar
3. Gill, S.S., Topham, P.J., Sealy, B.J. and Stephens, K.G., J. Phys. D: Appl. Phys., 14 (1981).CrossRefGoogle Scholar