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Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

Published online by Cambridge University Press:  01 February 2011

Galina Khlyap
Galina Khlyap*
Affiliation:
State Pedagogical University, 24 Franko str., Drogobych, 82100, Ukraine
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Abstract

Room-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.35
Copyright
Copyright © Materials Research Society 2002

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References

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