Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-04-30T16:36:18.457Z Has data issue: false hasContentIssue false
  • English
  • Français

A Laser Triggered Self-Sustaining Metals-Compound Semiconductor Transition for AlSb

Published online by Cambridge University Press:  15 February 2011

R. Andrew ,
L. Baufay ,
A. Pigeolet  and
L.D. Laude
R. Andrew
Affiliation:
Faculté des Sciences, Université de 1'Etat, B–7000 Mons, BELGIUM
L. Baufay
Affiliation:
Faculté des Sciences, Université de 1'Etat, B–7000 Mons, BELGIUM
A. Pigeolet
Affiliation:
Faculté des Sciences, Université de 1'Etat, B–7000 Mons, BELGIUM
L.D. Laude
Affiliation:
Faculté des Sciences, Université de 1'Etat, B–7000 Mons, BELGIUM
Get access

Abstract

The preparation of AlSb thin films by pulsed laser annealing of Al/Sb sandwiches is studied in order to resolve some past controversy about the temperature rise induced by the laser pulse. Using 1000 Ȧ thick two layer films supported by TEM grids, we investigate the energy threshold for complete transformation as a function of pulse duration from 15 nsec to 100 msec, and of ambient temperature from −100°C to 250°C.

We thence calculate the temperature effect directly induced by the laser to be about 930°C, or approximately the melting point of the metals, whereas inert gas furnace anneals of comparable films show transformation at this temperature occuring only in about 100 sec. We discuss the isoenergetic nature of the system for short laser pulses and the role of the heat of transformation, and thus conclude that the reaction is thermally triggered by the laser pulse but is to some extent self-sustaining via the heat of transformation locally distributed. This model is also shown to have equal validity for the systems CdTe, CdSe and AlAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 719
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liu, Yung S., Chiang, S.W. and Bacon, F., Proceedings of MRS Annual Meeting 1980 Vol. 1, p 117.Google Scholar
2. Chiang, S.W., Liu, Y.S. and Reihl, R.F., Ibid p 407.Google Scholar
3. Lau, S.S., Mäenpää, Martti and Mayer, James W. Ibid p 547.Google Scholar
4. Wittmer, M. and von Allmen, M. Ibid p 533.Google Scholar
5. Buene, L., Jacobson, D.C., Nakahara, S., Poate, J.M., Draper, C.W. and Hirvonen, J.K. Ibid p. 583.Google Scholar
6. Andrew, R., Ledezma, M., Lovato, M., Wautelet, M. and Laude, L.D. App. Phys. Lett. 35 418 (1979).CrossRefGoogle Scholar
7. Andrew, R., Baufay, L., Laude, L.D., Lovato, M. and Wautelet, M. Journal de Physique 41 C4–71 (1980).Google Scholar
8. Thermophysical Properties of Matter-TPRC data series vol. 5Google Scholar
9. Pines, B.Y. and Chaikovski, E.F. Soy. Phys. Sol. Stat. 1, 864 (1959).Google Scholar
10. Baufay, L., Dispa, D., Pigeolet, A. to be published.Google Scholar
11. Wampler, W.R., Follstaedt, D.M. and Peercy, P.S. Proceedings of MRS Annual Meeting 1980 Vol. 1 p 567.Google Scholar
12. Table of Periodic Properties Sergent, E.H. and Co 1964.Google Scholar
13. Kubaschowski, O. and Evans, E.L. “Metallurgical Thermochemistry” p 123, Pergamon, N.Y. (1958).Google Scholar
14. C.R.C 49th Ed.Google Scholar
15. Abrikosov, N.Kh., Bankina, V.F., Poretskaya, L.V., Shelimova, L.E. and Skudnova, E.V. “Semiconducting II–VI, IV–VI and V–VI compounds” Plenum N.Y. (1968).Google Scholar
16. Willardson, R.K. and Beer, A.C. (Eds) “Semiconductors and Semimetals” Vol. 4 Academic (1968).Google Scholar