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Leakage Currents in P-Channel Accumulation Mode Tft's

Published online by Cambridge University Press:  28 February 2011

B.A. Khan ,
T. Marshall ,
E. Arnold  and
R. Pandya
B.A. Khan
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
T. Marshall
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
E. Arnold
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
R. Pandya
Affiliation:
Philips Laboratories, Briarcliff Manor, NY 10520
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Abstract

We have fabricated accumulation mode MOSFETS in poly-silicon thin films and studied the effect of passivation of the leakage currents in these devices. We have used C-V measurements ot determine the effective doping concentration and depletion layer widths in the passivated and unpassivated devices. We find that passivation reduces the effective doping concentration and therefore increases the depletion layer width. Although this change in effective doping concentration is small (less thean a factor of 2), the increase in depletion layer width is sufficient to pinch off the passivated device but not the unpassivated one. This leads to the dramatic reduction in leakage currents after passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 435
Copyright
Copyright © Materials Research Society 1986

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References

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