Hostname: page-component-848d4c4894-p2v8j Total loading time: 0 Render date: 2024-05-01T06:08:27.417Z Has data issue: false hasContentIssue false
  • English
  • Français

Line-Source E-Beam Crystallization of Silicon-on-Insulator Films

Published online by Cambridge University Press:  22 February 2011

J. A. Knapp  and
S. T. Picraux
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, USA
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, USA
Get access

Abstract

Silicon-on-insulator films have been formed using a 20 mm by 1 mm line-source electron beam, with sample sweep speeds of 100–500 cm/sec and peak beam power densities up to 75 kW/cm2. Films were formed over 1 and 2 μm thick SiO2 isolating layers on 4°C diameter Si<100> wafers, with stripe openings of 5 to 100 μ width for seeding the crystallization from the substrate. Films consisted of Si layers from 0.4 to 1.0 μm thickness, with a capping layer of 2 μm SiO2. By sweeping the beam parallel to the long axis of the seed openings, smooth, oriented films were obtained, with low-angle grain boundaries confined to midway between seed openings. Best results were obtained for ≲ 50 μm spacing between seed openings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 533
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work performed at Sandia National Laboratories supported by the US Department of Energy under contract number DE-AC04-76DP00789.

References

REFERENCES

1. See, for example, the papers in Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Brown, W. L., and Lemons, R. A., eds. (North Holland, NY 1983).Google Scholar
2.Knapp, J. A. and Picraux, S. T., ref. 1, p. 557.Google Scholar
3.Celler, G. K., Trimble, L. E., Ng, K. K., Leamy, H. J., and Baumgart, H., Appl. Phys. Lett. 40, 1043 (1982).Google Scholar
4.Colinge, J. P., Demoulin, E., Bensahel, D., and Auvert, G., Appl. Phys. Lett. 41, 346 (1982).Google Scholar
5.Geis, M. W., Smith, Henry I., Tsaur, B-Y., Fan, John C. C., Silversmith, D. J., Mountain, R. W. and Chapman, R. L., ref. 1, p. 477.Google Scholar
6.Secco d'Aragona, F., J. Electrochem. Soc. 119, 948 (1972).Google Scholar