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The Local Electronic structure at Grain Boundaries and Hetero- Interfaces in ZnO Thin Films Grown by Laser Deposition.

Published online by Cambridge University Press:  01 February 2011

Alexander Kvit ,
Gerd Duscher ,
Chunming Jin  and
Jagdish Narayan
Alexander Kvit
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, NCSU, Raleigh, NC
Gerd Duscher
Affiliation:
Joint position in Oak-Ridge National Laboratory, TN.
Chunming Jin
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, NCSU, Raleigh, NC
Jagdish Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, NCSU, Raleigh, NC
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Abstract

The structure and chemistry of interfaces and grain boundaries are known to influence the optical and electrical properties of wide-band gap semiconductors structures. ZnO/AlN/Si(100) heterostructures grown by laser deposition were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local electronic structure of ZnO grain boundaries was investigated by high resolution Z-contrast imaging using scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy in a scanning mode. Zcontrast imaging and EELS were performed simultaneously enabling direct correlations between interface chemistry and local structure to be made. ZnO grain boundaries are composed of a periodic array of a basic structural unit. On the basis of the electron energy-loss near-edge structure (ELNES) of zinc and oxygen edges associated with the ZnO- grain boundaries, the corresponding electronic spectrum was discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R8.8
Copyright
Copyright © Materials Research Society 2002

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References

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