Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-17T07:18:49.223Z Has data issue: false hasContentIssue false
  • English
  • Français

Local Surface Modification of ECR Sputtered Carbon Film and Its Application to Ultra High Density Data Storage

Published online by Cambridge University Press:  01 February 2011

S. Tsuchitani ,
M. Isozaki ,
R. Kaneko ,
I. Tanaka  and
S. Hirono
S. Tsuchitani
Affiliation:
Department of Opto-Mechatronics, Wakayama University, 930 Sakaedani, Wakayama-shi, Wakayama 640–8510, Japan
M. Isozaki
Affiliation:
Department of Opto-Mechatronics, Wakayama University, 930 Sakaedani, Wakayama-shi, Wakayama 640–8510, Japan
R. Kaneko
Affiliation:
Department of Opto-Mechatronics, Wakayama University, 930 Sakaedani, Wakayama-shi, Wakayama 640–8510, Japan
I. Tanaka
Affiliation:
Department of Material Science and Chemistry, Wakayama University, 930 Sakaedani, Wakayama-shi, Wakayama 640–8510, Japan
S. Hirono
Affiliation:
NTT Afty Corporation, 3–9–11 Midori-cho, Musashino-shi, Tokyo 180–0012, Japan
Get access

Abstract

We propose a probe storage using a carbon film deposited by electron cyclotron resonance plasma (ECR) sputtering as a recording material. Such storage has a potential to achieve an electrical data storage with small writing voltage and ultra high recording density due to super hardness and large electric conductivity of the ECR sputtered carbon (ECR-C). The ECR-C film is deposited on a silicon substrate covered by a thermal oxide. Recording experiments are performed by a conductive atomic force microscope with a gold coated tip. The electrical resistance of the film surface is decreased locally by applying voltages smaller than 2V between the film and the tip. The resistance decrease of the film by the voltage application are caused by a thermal reaction due to Joule's heat at contact portion of the film with the tip. Data bits with size of about 70nm can be formed by applying a pulse row as a writing voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH2.5
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Barrett, R.C. and Quate, C.F., J. Appl. Phys. 70, 2725 (1991).Google Scholar
2. Mamin, H.J. and Rugar, D., Appl. Phys. Lett. 61, 1003 (1992).Google Scholar
3. Sato, A., Momose, S., and Tsukamoto, Y., J. Vac. Sci. Technol. B13, 2832 (1995).Google Scholar
4. Hosaka, S., Koyanagi, H., Kikukawa, A., Miyamoto, M., Imura, R., and Ushiyama, J., J. Vac. Sci. Technol. B13, 1307 (1995).Google Scholar
5. Tsai, H.C. and Bogy, D.B., J. Vac. Sci. Technol. A5, 3287 (1987).Google Scholar
6. Ono, T., Takahashi, C. and Matsuo, S., Jpn. J. Appl. Phys. Part 2, 23, L534 (1984).Google Scholar
7. Hirono, S., Umemura, S., Ando, Y., Hayashi, T., and Kaneko, R., IEEE Trans. Magn. 34, 1729 (1998).Google Scholar
8. Hirono, S., Umemura, S., Tomita, M., and Kaneko, R., Appl. Phys. Lett. 80, 425 (2002).Google Scholar
9. Tachiki, M., Fukuda, T., Sugata, K., Seo, H., Umezawa, H., and Kawarada, H., Jpn. J. Appl. Phys. 39, 4631 (2000)Google Scholar
10. Mühl, T., Brückl, H., Weise, G., and Reiss, G., J. Appl. Phys. 82, 5255 (1997).Google Scholar
11. Kalish, R., Lifshitz, Y., Nugent, K., and Prawer, S., Appl. Phys. Lett. 74, 2936 (1999).Google Scholar
12. Chhowalla, M., Ferrari, A.C., Robertson, J., and Amaratunga, A.J., Appl. Phys. Lett. 76, 1419 (2000)Google Scholar