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Localized Epitaxial Growth of IrSi3, ReSi2, and Rh3Si4 on (111) and (00l)Si

Published online by Cambridge University Press:  28 February 2011

J.J. Chu ,
L.J. Chen  and
K.N. Tu
J.J. Chu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
K.N. Tu
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

IrSi3, ReSi2, and Rh3Si4 have been grown epitaxially on (111) and (001) Si. Transmission electron microscopy has been applied to characterize the epitaxial films. The orientation relationships between epitaxial sulicides and substrate silicon were determined from electron diffraction analysis. The average size, areal fraction of surface coverage, and fraction of epitaxy were measured. The silicide/silicon interface structures were analyzed.

The best epitaxy in the three metal/Si systems was found to be epitaxial IrSi3 in Ir/(111)Si samples annealed at 1000 °C. Epitaxial regions, as large as 40 μm in size, were observed. Three major modes of IrSi3 epitaxy on (111)Si were identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 447
Copyright
Copyright © Materials Research Society 1988

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References

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