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Low Energy Electron Microscopy of Surface Processes on Clean Si(111) and Si (100)

Published online by Cambridge University Press:  25 February 2011

E. Bauer ,
M. Mundschau ,
W. Swiech  and
W. Telieps
E. Bauer
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
M. Mundschau
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
W. Swiech
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
W. Telieps
Affiliation:
Physikalisches Institut, Technische Universität Clausthal, D-3392 Clausthal-Zellerfeld and SFB 126
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Abstract

Low energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 225
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Bauer, E. and Telieps, W., Scanning Microscopy Suppl. 1, 99 (1987).Google Scholar
2. Bauer, E. and Telieps, W., in Surface and Interface Characterization by Electron Optical Methods, ed. by Howie, A. and Valdre, V. (Plenum Publishing Corp., New York, 1988), p. 195.Google Scholar
3. Bauer, E., Mundschau, M., Swiech, W. and Telieps, W., Ultramicroscopy 31, 49 (1989).Google Scholar
4. Bauer, E., in The Physics and Chemistry of Solid Surfaces edited by Vanselow, R. and Howe, R. (Springer, Berlin, 1990), to be published.Google Scholar
5. Telieps, W. and Bauer, E., Surface Sci. 162, 163 (1985); Ber. Bunsenges. Phys. Chem. 90, 197 (1986).Google Scholar
6. Osakabe, N., Tanishiro, Y., Yagi, K. and Honjo, G., Surface Sci. 109, 353 (1981).Google Scholar
7. Bauer, E., Mundschau, M., Swiech, W. and Telieps, W., in Evaluation of Advanced Semiconductor Materials by Electron Microscopy, ed. by Cherns, D. (Plenum Publishing Corp., New York, 1989), p. 283.Google Scholar
8. Telieps, W., Appl. Phys. A 44, 55 (1987).Google Scholar
9. Chadi, D.J., Phys. Rev. Lett. 59, 1691 (1987).Google Scholar
10. Mundschau, M., Bauer, E., Telieps, W. and Swiech, W., Phil. Mag., in print.Google Scholar
11. Mundschau, M., Bauer, E., Telieps, W. and Swiech, W., Surface Sci., in print.Google Scholar
12. Tanishiro, Y., Takayanagi, K. and Yagi, K., Ultramicroscopy 11, 95 (1983).Google Scholar
13. Bauer, E., Mundschau, M., Swiech, W. and Telieps, W., Inst. Phys. Conf. Ser. No 93 (1988), Vol. 1, p. 213.Google Scholar
14. Mundschau, M., Swiech, W. and Bauer, E., to be published.Google Scholar
15. Swiech, W., Mundschau, M. and Bauer, E., to be published.Google Scholar
16. Herring, C., in Structure and Properties of Solid Surfaces, ed. by Gomer, R. and Smith, C.S. (Univ. Chicago Press, Chicago, 1953), p. 5.Google Scholar