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Low Resistance α-Ta Film For Large Area Electronic Devices

Published online by Cambridge University Press:  25 February 2011

Shigeru Yamamoto ,
Takehito Hikichi  and
Toshihisa Hamano
Shigeru Yamamoto
Affiliation:
Fuji Xerox, Hongo 2274 Ebina-shi Kanagawa, Japan
Takehito Hikichi
Affiliation:
Fuji Xerox, Hongo 2274 Ebina-shi Kanagawa, Japan
Toshihisa Hamano
Affiliation:
Fuji Xerox, Hongo 2274 Ebina-shi Kanagawa, Japan
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Abstract

A New method of the low resistivity α-Ta deposition technique has been developed. The sputtered Ta film deposited on TaMo alloy has bcc structure (α-Ta) in contrast to tetragonal of the Ta mono layer (β-Ta), and shows the resistivity as low as 22μΩ cm. The mechanism of this transformation is not explained by simple epitaxial growth. X-ray diffraction analysis and RBS analysis indicated that the TaMo alloy layer, due to Mo diffusion from the under layer, acts as a seed plane of growth. The Ta/TaMo layered film is suitable for Large Area Electronic devices for its low resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 575
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1) lto, H., Suzuki, T., Nobue, M., Nishihara, Y., Sakai, Y., Ozawa, T. and Tomiyama, S., Proc. MRS Symp., 95, 437 (1987)Google Scholar
2) Dohjo, M., Aoki, T., Suzuki, K., lkeda, M., Higuch, T. and Oana, Y., S.I.D ‘88 Digest, 330 (1988).Google Scholar
3) Nomoto, T., Sekodo, , Abiko, I., Kaminishi, K., Proc. Japan Display ‘89, 502 (1989)Google Scholar
4) lkeda, M., Dohjo, M. and Oana, Y., J.Apple.Phys. 66 (5), 2052 (1989)Google Scholar