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Low Temperature (150–250°C) Deposition of n+ and p+ Microcrystalline Silicon for VLSI Device Contacts

Published online by Cambridge University Press:  22 February 2011

G. Rajeswaran ,
P. E. Vanier ,
F. J. Kampas  and
R. R. Corderman
G. Rajeswaran
Affiliation:
Division of Metallurgy and Materials ScienceBrookhaven National Laboratory, Upton, New York 11973
P. E. Vanier
Affiliation:
Division of Metallurgy and Materials ScienceBrookhaven National Laboratory, Upton, New York 11973
F. J. Kampas
Affiliation:
Division of Metallurgy and Materials ScienceBrookhaven National Laboratory, Upton, New York 11973
R. R. Corderman
Affiliation:
Division of Metallurgy and Materials ScienceBrookhaven National Laboratory, Upton, New York 11973
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Abstract

The rf glow discharge decomposition of dilute mixtures (∼1%) of SiH4 in H2, with suitable doping agents such as PH3 or B2 H6 added, produces n+ and p+ microcrystalline (μc) silicon films with resistivities (ρ) in the 10−1 Ω.cm range at exceedingly low substrate temperatures Ts (150–250°C). The μc-Si films consist of two phases with crystalline clusters embedded in an amorphous matrix. The films are stable when temperature-cycled in the 30–400°C range and the resistivity decreases when annealed above the original deposition temperature. A model of microcrystalline film growth involving the reactions between the gas phase radicals and the growing film surface is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 563
Copyright
Copyright © Materials Research Society 1984

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References

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