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Low Temperature Deposition of Hard, Amorphous Diamondlike Films by Laser Evaporation

Published online by Cambridge University Press:  25 February 2011

J. Krishnaswamy
Affiliation:
Materials Science and Engg., North Carolina State University, Raleigh, N.C.- 27695
A. Rengan
Affiliation:
Materials Science and Engg., North Carolina State University, Raleigh, N.C.- 27695
A. Srivatsa
Affiliation:
Materials Science and Engg., North Carolina State University, Raleigh, N.C.- 27695
J. Narayan
Affiliation:
Materials Science and Engg., North Carolina State University, Raleigh, N.C.- 27695
Y. Cong
Affiliation:
Materials Research Lab., Pennsylvania State University, University Park, PA-16802
R. Collins
Affiliation:
Materials Research Lab., Pennsylvania State University, University Park, PA-16802
K. Vedam
Affiliation:
Materials Research Lab., Pennsylvania State University, University Park, PA-16802
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Abstract

Substrate temperature during deposition of hard carbon films by short pulse (40 nsec, FWHM) eximer (308 nm) laser ablation (∼1.25 × 108 W/cm2) of solid carbon affects the optical and mechnical properties of deposited films. Films deposited at 25° C are superior to those deposited at 500° C. Deposited films were charaterized by spectroscopic ellipsometry, microhardness, TEM, Raman and FT-IR techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

(1) DeVries, R.C., Syntfsests of diarond under metastable conditions, GE Corporate Research and Development, Technical Information Series, Classl, Report No.86 CRD (1987) p.247.Google Scholar
(2) Angus, J.C. and Hayman, C.C., Science, 913, August (1988).Google Scholar
(3) Kawato, T. and Kondo, K., Jpn.J.Appl.Phys. 26, 1429 (1987).CrossRefGoogle Scholar
(4) Setaka, N., Sym.N, MRS Fall Meeting, Boston (1987).Google Scholar
(5) Sawabe, A. and Inuzuka, T., Appl.Phys.Lett., 46(2), 146 (1985).CrossRefGoogle Scholar
(6) Koskinen, J., Hirvonen, J.P. and Antilla, A., Appl.Phys.Lett., 47(9), 941 (1985).CrossRefGoogle Scholar
(7) Enke, K., Thin Solid Films, 80, 227 (1981).CrossRefGoogle Scholar
(8) Holland, L. and Ohja, S.J., Thin Solid Films, 58, 107 (1979).CrossRefGoogle Scholar
(9) Zelez, J., RCA Review, 43, 665 (1982).Google Scholar
(10) Bergman, E. and Vogel, J., J.Vac.Sci.and Technol., 5, 3287 (1987).CrossRefGoogle Scholar
(11) Tsai, Hsia-Chu and Bogy, D.B., J.Vac.Sci.and Technol., 5, 2867 (1987).CrossRefGoogle Scholar
(12) Howe, A.T., J.Electrochem.Soc:Electrochemical Sci.and Technol., 134, 2470 (1987).CrossRefGoogle Scholar
(13) Namba, Y. and Mori, T., J.Vac.Sci.and Technol.,3, 319 (1985).CrossRefGoogle Scholar
(14) Sato, T., Furuo, S., Iguchi, S. and Hanabusa, M., Jpn.J.Appl.Phys., 26, 1487 (1987).CrossRefGoogle Scholar
(15) Narayan, J., Buinno, N., Singh, R., Holland, O.W. and Auciello, O., Appl.Phys.Lett., 51, 1845 (1987).CrossRefGoogle Scholar
(16) Vedam, K., MRS Bulletin, Jan.!., 21 (1987).Google Scholar
(17) Aspnes, D.E. ands Studna, A.A., Appl.Opt., 15, 10 (1975).Google Scholar
(18) Budde, W., Appl.Opt., 1, 201 (1962).CrossRefGoogle Scholar
(19) Ramsteiner, M. and Wagner, J., Appl.Phys.Lett., 51, 135 (1987).CrossRefGoogle Scholar