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Low Temperature Formation of Ferroelectric thin Films

Published online by Cambridge University Press:  25 February 2011

Chi Kong Kwok  and
Seshu B. Desu
Chi Kong Kwok
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute & State University Blacksburg, VA 24061
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute & State University Blacksburg, VA 24061
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Abstract

Two novel processes have been developed to lower the transformation temperature of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio. One process makes use of high pressure and the other process uses seeding to encourage the transformation.

A previous study has shown that nucleation is the rate-limiting step for the perovskite formation. Therefore, any process that enhances the kinetics of the nucleation will likely decrease the transformation temperature. In this process, a very thin seeding layer, which has a low effective activation energy for perovskite formation, is used to provide nucleation sites needed for the low temperature perovskite formation. In this study, the pyrochlore to perovskite phase transformation temperature of PbZrxTi1−xO33 films of high Zr/Ti ratio (e.g. x = 53/47) can be lowered by as much as 100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 371
Copyright
Copyright © Materials Research Society 1992

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References

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