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Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure

  • D. P. Adamst (a1) (a2), D. J. Eaglesham (a1) and S. M. Yalisove (a1)

Hydrogen is shown to influence the surface roughness during low temperature Si MBE. Small partial pressures (1 × 10-7 Torr) of deuterium, introduced during Si growth at 310°C, are sufficient to increase the surface width to ∼30 Å before breakdown of epitaxy. This work is consistent with previous studies of the dependence of epitaxial thickness on hydrogen partial pressure and supports a model in which surface roughening leads to the breakdown of epitaxy.

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  • EISSN: 1946-4274
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