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Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

Published online by Cambridge University Press:  28 February 2011

T. Eshita ,
T. Suzuki ,
T. Hara ,
F. Mieno ,
Y. Furumura ,
M. Maeda ,
T. Sugii  and
T. Ito
T. Eshita
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Suzuki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Hara
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
F. Mieno
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Y. Furumura
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
M. Maeda
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Sugii
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi 243-01, Japan
T. Ito
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi 243-01, Japan
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Abstract

We developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 357
Copyright
Copyright © Materials Research Society 1988

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References

(1) Ferry, D. F., Phys. Rev. B 12, 2361 (1976).Google Scholar
(2) Matsunami, H., Nishino, S., and Tanaka, T., Jpn. Appl. Phys., 45,138 (1978).Google Scholar
(3) Liews, P. H., and Davis, R. F., J. Electrochem. Soc., 132, 642 (1985).Google Scholar
(4) Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett., 42, 460 (1983).CrossRefGoogle Scholar
(5) Furumura, Y., Doki, M., Mieno, F., Eshita, T., Suzuki, T., and Maeda, M., Proc. 10th CVD International Symposium in Honolulu, 453 (1987).Google Scholar
(6) Matsunami, H., Nishino, S., and Tanaka, T., J. Cryst. Growth, 45,138 (1987).Google Scholar