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Magneto-Optic Studies of GaN Films and GaN/AlGaN Heterostructures

Published online by Cambridge University Press:  21 February 2011

Y.J. Wang ,
H.K. Ng ,
R. Kaplan ,
K. Doverspike ,
D.K. Gaskill ,
T. Ikedo ,
H. Amano  and
I. Akasaki
Y.J. Wang
Affiliation:
National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306
H.K. Ng
Affiliation:
Department of Physics, Center for Materials Research and Technology, Florida State University, Tallahassee, FL 32306-3016
R. Kaplan
Affiliation:
Naval Research Laboratory, Washington DC 20375
K. Doverspike
Affiliation:
Naval Research Laboratory, Washington DC 20375
D.K. Gaskill
Affiliation:
Naval Research Laboratory, Washington DC 20375
T. Ikedo
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501, Shiogamaguchi, Tempaku-Kuku, Nagoyo 468, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501, Shiogamaguchi, Tempaku-Kuku, Nagoyo 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501, Shiogamaguchi, Tempaku-Kuku, Nagoyo 468, Japan
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Abstract

Magneto-studies have been carried out for several MOCVD grown GaN thin films and GaN/AlGaN heterostructures at magnetic fields up to 30 T and at temperatures between 4.2 K to 100 K. Electron cyclotron resonance was observed in two heterostructures with high mobilities (μ > 2000 cm2/V-s), the effective mass obtained from the cyclotron resonance measurement is 0.23±0.01 m0, where m0 is the mass of free electron. For Si-doped thin film GaN there was no sign of electron cyclotron resonance even when samples were heated up to 100 K. However, a Is to 2p+ absorption line was observed for Si-doped GaN samples. A binding energy of 29 meV and low frequency dielectric constant of 10.4 is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 697
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Strite, S. and Markoc, H., J. Vac. Sci. Technol. B 10, p1237 (1992).Google Scholar
2 Meyer, B. K., Volm, D., Graber, A., Alt, H. C., Detchprohm, T., Amano, A., and Akasaki, I., Sol. St. Comm. 95, 597 (1995).Google Scholar
3 Alt, H. C., Meyer, B. K., Volm, D., Graber, A., Drechsler, M., Hoffman, D. M., Detchprohm, T., Amano, A., and Akasaki, I., Proc. 18th Internatl. Conf. on Defects in Semicond., Sendai, (1995), to be published.Google Scholar
4 Ng, H. K. and Wang, Yong-Jie, to be published in the Proceedings of the Physical Phenomena at High Magnetic Field II, Science World Press, Singapore.Google Scholar
5 Redwing, J. M., Tishchler, M.A., Choi, S., Mitchel, W., and Saxler, A., Res. Soc. Symp. GAN and Related Materials, Fall 1995, to be published.Google Scholar
6 Mikesta, H. J. and Schmidt, H., Z. Phys. B 20, 43 (1975).Google Scholar
7 Thiele, F., Merkt, U., Kotthaus, J. P., Lommer, G., Malcher, F., Rossler, U., and Weimann, G., Sol. St. Comm. 62, 841 (1987).Google Scholar
8 Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
9 Miragliotta, J. A. in Properties of Group III Nitrides, EMIS Data Reviews No. 7, Edgar, J. H., ed., INSPEC (1994), p. 190 Google Scholar
10 Manchon, D. D. Jr., Barker, A. S. Jr., Dean, P. J., and Zetterstrom, R. B., Sol. St. Comm. 8, 1227 (1970).Google Scholar