Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-16T15:31:14.576Z Has data issue: false hasContentIssue false

Magneto-Optical Studies of 2-D Electrons in GaAs-AlGaAs Single Heterojunctions

Published online by Cambridge University Press:  28 February 2011

K-S. Lee
Affiliation:
Department of Physics, Northeastern University, Boston, MA 02115
C.H. Perry
Affiliation:
Department of Physics, Northeastern University, Boston, MA 02115
J.M. Worlock
Affiliation:
Bellcore, Red Bank, NJ 07701
Get access

Abstract

We report low temperature magneto-photoluminescence(PL) investigations of ex-citon spectra of n-doped (AlGa)As-GaAs single heterojunctions. At zero field, the PL spectrum is dominated by the free excitons and excitons bound to the impurities in the bulk GaAs, which overlap a weak emission band associated with the radiative transition between the two dimensional electron gas(2DEG) and the photoexcited holes. In the presence of a magnetic field applied parallel to the growth axis the transitions from the 2DEG, now quantized into Landau levels, become well pronounced. Additionally, intensity oscillations are observed when the 2DEG line crosses the exciton lines, which we believe is due to the effect of a resonant tunneling of the 2DEG from the quantum well region to the bulk GaAs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1von Klitzing, K., Dorda, G., and Pepper, M., Phys. Rev. Lett. 45, 494 (1980).Google Scholar
2Tusi, D.C., Stormer, H.L., and Gossard, A.C., Phys. Rev. Lett. 48, 148 (1982).Google Scholar
3Schlesinger, Z., Hwang, J.C.M., and Allen, S.J. Jr., Phys. Rev. Lett. 50, 1098 (1983).Google Scholar
4Koteles, Emil S., Chi, J.Y., and Holmstrom, R.P., SPIE Vol. 794 ‘Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices’, 61 (1987).Google Scholar
5Yang, C.H. and Lyon, S.A., and Tu, C.W., Superlattices and Microstructures, 3, 269 (1987).Google Scholar
6Kukushkin, I., Timofeev, V., von Klitzing, K., and Ploog, K., Advances in Solid State Physics, 28, 21 (1988).Google Scholar
7Willmann, F., Suga, S., Dreybrodt, W., and Cho, K., Solid State Communications, 14, 738 (1974).Google Scholar
8Ando, T., and Murayama, Y., J. Phys. Soc. Japan, 54, 1519 (1985).Google Scholar