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Material Properties of Semiconductor Strained-Layer Superlattices*

Published online by Cambridge University Press:  22 February 2011

G. C. Osbourn
G. C. Osbourn*
Affiliation:
Sandia National LaboratoriesAlbuquerque, New Mexico 87185
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Abstract

High quality superlattices can be grown from semiconductor materials with lattice mismatches of several percent if the layers are kept sufficiently thin. The mismatch in these structures is accommodated by coherent layer strains, so that misfit defects are not generated at the superlattice interfaces. These strained-layer superlattices have unique structural, optical, and electrical properties due to both the large layer strains and the flexibility in the choice of lattice mismatched layer materials. Recent results which demonstrate the high crystalline quality of these mismatched heterostructures are reviewed. Further results are presented which illustrate some of the unique material properties of these structures, and potential applications associated with such properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 455
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

This work was performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE-AC04–76DP00789.

References

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