Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-20T22:33:54.882Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurements of Light-Induced Degradation in A-Si, Ge:H, F Alloys,

Published online by Cambridge University Press:  28 February 2011

J. Kolodzey ,
S. Aljishi ,
Z E. Smith ,
V. Chu ,
R. Schwarz  and
S. Wagner
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
Get access

Abstract

The effects of illumination on the optical and electronic properties of narrow gap hydrogenated and fluorinated amorphous Si-Ge (a-Si1-xGex:H, F) alloys have been evaluated. A series of alloys with optical gaps ranging from 1.30 eV to 1.64 eV has been light soaked at ∼1 sun intensity for 354 hours. Measurements of sub-gap absorption, photo- and dark conductivities and dark conductivity activation energy were made on alloys in the annealed and the light-soaked states. The results indicate that samples with optical gaps ≳ 1.4 eV degrade significantly. The 1.3 eV sample shows no degradation in its optical or electronic properties except for a factor of 5 increase in the dark conductivity.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 237
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D. and Wronski, C., Appl. Phys. Lett., vol.31, p. 292, 1977.Google Scholar
2. Wronski, C.R. and Daniel, R.E., Phys. Rev. B, vol.23, p. 794.Google Scholar
3. Fritzsche, H., AlP Conf. Proc. 120, p. 478, 1984.Google Scholar
4. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B, vol.32, p. 23, 1985.CrossRefGoogle Scholar
5. Jackson, W.B. and Amer, N.M., Phys. Rev. B, vol.25, p. 5559, 1982.Google Scholar
6. Skumanich, A., Amer, N.M. and Jackson, W.B., Phys. Rev. B, vol.31, p. 2263, 1985.CrossRefGoogle Scholar
7. Yukimoto, Y., in, “Amorphous Semiconductor Technologies and Devices,” in JARECT, vol.6 (1983), ed. Hamakawa, Y., p. 136, Ohmsha and North-Holland, New York.Google Scholar
8. Nakamura, G., Sato, K. and Yukimoto, Y., Solar Cells, vol.9, p. 75, 1981.Google Scholar
9. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Proc. MRS 1985 Spring Meeting, Mat. Issues in Appl. of Amorphous Silicon Tech., p. 301, ed. by Adler, D., Madan, A. and Thompson, M.J., 1985.Google Scholar
10. Guha, S., J. Non-Cryst. Solids, vol.77&78, p. 1451, 1985.Google Scholar
11. Kolodzey, J., Aljishi, S., Schwarz, R. and Wagner, S., Electrochemical Society Spring Meeting, Toronto, Abstract No. 176, May 12–17, 1985.Google Scholar
12. Kolodzey, J., Aljishi, S., Schwarz, R. and Wagner, S.. submitted to J. Vac. Sci. Technol.Google Scholar
13. Courtesy D'Aiello, Dr. R., Solarex Corp, Newtown, PA.Google Scholar
14. Smith, Z E. and Wagner, S., Proc. 18th IEEE Photovoltaic Specialists' Conf., Las Vegas, 1985, to be published.Google Scholar
15. Vanacek, M., Kocka, J., Stuchlik, J., Kozisek, Z., 0. Stika and Triska, A., Sol. Energy Mater., vol.8, p. 411, 1983.CrossRefGoogle Scholar
15. Tiedje, T., Cebulka, J.M., Morel, D.L. and Abeles, B., Phys. Rev. Lett., vol.46, p. 1425, 1981.Google Scholar
17. Slobodin, D., Kolodzey, J., Aljishi, S., Okada, Y., Chu, V., Shen, D.-S., Schwarz, R. and Wagner, S., Proc. 18th IEEE Photovoltaic Specialists' Conf., Las Vegas, 1985, to be published.Google Scholar
18. Smith, Z E., Wagner, S. and Faughnan, B.W., Appl. Phys. Lett., vol.46, p. 1078, 1985.Google Scholar