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The Mechanism for Ultrananocrystalline Diamond Growth: Experimental and Theoretical Studies

Published online by Cambridge University Press:  01 February 2011

Paul William May  and
Yuri A. Mankelevich
Paul William May
Affiliation:
paul.may@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, BRISTOL, BS8 1TS, United Kingdom, +44 (0)117 9289927, +44 (0)117 9251295
Yuri A. Mankelevich
Affiliation:
ymankelevich@mics.msu.su, Moscow State University, Nuclear Physics Institute, Moscow, 119992, Russian Federation
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Abstract

Ar/CH4/H2 gas mixtures have been used to deposit microcrystalline diamond, nanocrystalline diamond and ultrananocrystalline diamond films using hot filament chemical vapor deposition. A 3-dimensional computer model was used to calculate the gas phase composition for the experimental conditions at all positions within the reactor. Using the experimental and calculated data, we show that the observed film morphology, growth rate, and across-sample uniformity can be rationalized using a model based on competition between H atoms, CH3 radicals and other C1 radical species reacting with dangling bonds on the surface. Proposed formulae for growth rate and average crystal size are tested on both our own and published experimental data for Ar/CH4/H2 and conventional 1%CH4/H2 mixtures, respectively.

Keywords

diamondchemical vapor deposition (CVD) (deposition)nanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J07-04
Copyright
Copyright © Materials Research Society 2007

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References

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