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Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

Published online by Cambridge University Press:  10 February 2011

Igor O. Usov ,
A. A. Suvorova ,
V. V. Sokolov ,
Y. A. Kudryavtsev  and
A. V. Suvorov
Igor O. Usov
Affiliation:
Ioffe Physical Technical Institute RAS, St. Petersburg, 194021, Russia
A. A. Suvorova
Affiliation:
Ioffe Physical Technical Institute RAS, St. Petersburg, 194021, Russia
V. V. Sokolov
Affiliation:
Ioffe Physical Technical Institute RAS, St. Petersburg, 194021, Russia
Y. A. Kudryavtsev
Affiliation:
Ioffe Physical Technical Institute RAS, St. Petersburg, 194021, Russia
A. V. Suvorov
Affiliation:
Cree Research Inc., Durham, NC 27713, USA
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Abstract

The diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 141
Copyright
Copyright © Materials Research Society 1998

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References

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