Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-21T08:02:03.723Z Has data issue: false hasContentIssue false

Metal Containing Link Formed in Amorphous Silicon Metal-To-Metal Antifuse

Published online by Cambridge University Press:  01 February 2011

Frank Hawley
Affiliation:
John McCollum Actel Corp., 955 E. Arques Ave., Sunnyvale, Ca. 94086, USA
Farid Issaq
Affiliation:
John McCollum Actel Corp., 955 E. Arques Ave., Sunnyvale, Ca. 94086, USA
Jeewika Ranaweera
Affiliation:
John McCollum Actel Corp., 955 E. Arques Ave., Sunnyvale, Ca. 94086, USA
Roy Lambertson
Affiliation:
John McCollum Actel Corp., 955 E. Arques Ave., Sunnyvale, Ca. 94086, USA
Get access

Abstract

A Metal-to-Metal (M2M) antifuse is formed using hydrogenated amorphous silicon as a dielectric material between two refractory metal electrodes. The M2M antifuse is used as a programmable device in an FPGA, where it is placed between two interconnect metal layers of a Logic CMOS process. The M2M device may then be programmed to interconnect logic circuits. The resulting programmed link is an alloy of amorphous silicon and barrier metal that forms a low resistance path between the logic circuits.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Shih, C., Lambertson, R., Hawley, F., Issaq, F., McCollum, J., Hamdy, E., Sakurai, H., Yuasa, H., Honda, H., Yamaoka, T., Wada, T., Hu, C., Characterization and Modeling of a Highly Reliable Metal-to-Metal Antifuse for High Performance and High-Density Field-Programmable Gate Arrays, IEEE IRPS Proceedings, pg 2533 (1997)Google Scholar
[2] Hamdy, E., McCollum, J., Chen, S., Chiang, S., Eltoukhy, S., Chang, J., Speers, T., Mohsen, A., Dielectric Based Antifuse for Logic and Memory IC's, IEEE IEDM Technical Digest, pg 786789 (1988)Google Scholar
[3] Hu, C., (invited) Interconnect Devices for Field Programmable Gate Arrays, IEEE IEDM Technical Digest, pg 591594 (1992)Google Scholar
[4] Chiang, S., Forouhi, R., Chen, W., Hawley, F., McCollum, J., Hamdy, E., Hu, C., Antifuse Structure Comparison for Field Programmable Gate Arrays, IEEE IEDM Technical Digest, pg 611614 (1992)Google Scholar
[5] Takagi, M., Yoshii, I., Ikeda, N., Yasuda, H., Hama, K., A Highly Reliable Metal-to-Metal Antifuse for High-Speed Field Programmable Gate Arrays, IEEE IEDM Technical Digest, pg 3134 (1993)Google Scholar
[6] Gordon, K., Wong, J., Conducting Filament of the Programmed Metal Electrode Amorphous Silicon Antifuse, IEEE IEDM Technical Digest, pg 2730 (1993)Google Scholar