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Metal Organic Chemical Vapor Deposition of Zinc Oxide

Published online by Cambridge University Press:  01 February 2011

William E. Fenwick
Affiliation:
fenwick@ece.gatech.edu, Georgia Institute of Technology, Electrical Engineering, United States
Vincent T. Woods
Affiliation:
vwoods@ece.gatech.edu, Georgia Institute of Technology, Electrical Engineering, United States
Ming Pan
Affiliation:
mpan@cermetinc.com, Cermet Inc, United States
Nola Li
Affiliation:
nola@ece.gatech.edu, Georgia Institute of Technology, Electrical Engineering, United States
Matthew H. Kane
Affiliation:
mhkane@ece.gatech.edu, Georgia Institute of Technology, Materials Science and Engineering, United States
Shalini Gupta
Affiliation:
guptasha@ece.gatech.edu, Georgia Institute of Technology, Electrical Engineering, United States
Varatharajan Rengarajan
Affiliation:
vrajan@cermetinc.com, Cermet Inc, United States
Jeff Nause
Affiliation:
jnause@cermetinc.com, Cermet Inc, United States
Ian T. Ferguson
Affiliation:
ianf@ece.gatech.edu, Georgia Institute of Technology, Electrical Engineering, United States
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Abstract

Thin films of ZnO were grown by metal organic chemical vapor deposition (MOCVD) in a vertical injection rotating disk reactor (RDR) system on sapphire substrates. Kinetics of ZnO growth by MOCVD were studied and an optimal growth window for a RDR tool was determined. Experimental growth conditions were chosen based on calculations of Reynolds Number (Re) and mixed convection parameter in order to select a growth window with stable gas flow and uniform heat transfer. Growth parameters were systemically varied within this window to determine the optimal growth conditions for this MOCVD tool and to study how these parameters affect film growth and quality. Properties of ZnNiO films grown by MOCVD were also studied to determine the effects of Ni incorporation on structural, optical, and magnetic properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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