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Metallic Impurities and Dopant Cross-Contamination Effects in Ion Implanted Surfaces

Published online by Cambridge University Press:  25 February 2011

L. A. Larson  and
M. I. Current
L. A. Larson
Affiliation:
National Semiconductor Corp. 2900 Semiconductor Drive, Santa Clara, CA 95051
M. I. Current
Affiliation:
Xerox-Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Contamination of implanted surfaces by metals and dopants is a significant limitation to the use of high-dose implantation for semiconductor IC fabrication. RBS, SIMS, SRP, chemical etching and IC device parameter measurements have been used to characterize contaminated surfaces implanted with modern, production-type implanters. Levels of dopant cross -contamination of the order of 10% of the primary dose have been observed. A systematic study of the effects of As, P, B and Sb implanted Si has shown measurable effects on diffusion profiles and junction depths at contamination levels as low as 0.01% of the primary dose. These effects are particularly serious for fast-diffusing contaminants in slow-diffusing primary dopants (such as P contamination in As implants). Evidence has been found for both sputtering and ‘vaporization’ mechanisms for transfer of contaminants from implanter surfaces to the wafer target. The effectiveness of machine design choices and process procedures (such as wafer clamp design, post-implant chemical cleans, and the use of screen oxides) in minimizing the effects of contamination are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 381
Copyright
Copyright © Materials Research Society 1985

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