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Metallurgy and Morphology of the Interface of AuGe Ohmic Contact to GaAs

Published online by Cambridge University Press:  22 February 2011

Amir A. Lakhani  and
David R. Urech
Amir A. Lakhani
Affiliation:
Bendix, Aerospace Technology Center9140 Old Annapolis RoadColumbia, Maryland 21045
David R. Urech
Affiliation:
Bendix, Aerospace Technology Center9140 Old Annapolis RoadColumbia, Maryland 21045
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Abstract

Scanning electron microscopy and energy dispersive x-ray analysis have been used to study the formation of AuGe ohmic contacts to GaAs. Both sintering and alloying of the metallization result in deep trenches and spikes. Lateral growth of the metallization at the perimeter of the contact is also reported. In situ analysis during the formation of the ohmic contact has demonstrated the formation of a solid phase complex of Au-Ge-As and the rapid loss of As at 450°C. The influence of the Au-Ge-As complex and the loss of As on the specific contact resistivity is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 551
Copyright
Copyright © Materials Research Society 1984

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References

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